PhD position - Multiphysical design of high-voltage power semiconductor modules for renewable energy conversion

OPPORTUNITY DETAILS

Total reward

0 $

State University

CEA Tech

Area

Western Europe

Host Country

France

Deadline

31 Oct 2021

Study level

Doctoral Degree

Opportunity type

PhD

Specialities

Engineering , Physics

Opportunity funding

Not funding

Eligible Countries

This opportunity is destined for all countries

Eligible Region

All Regions

SL-DRT-21-0387

RESEARCH FIELD

Solar energy for energy transition

ABSTRACT

Research and development around silicon carbide (SiC) power semiconductors provides samples that can withstand voltages up to 15kV. These devices switch at very high speeds (e.g. 120kV / µs for a 10kV SiC MOSFET or 180kV / µs for a 15kV SiC IGBT). Overall, the performances of these semiconductors are exceptional, and drastically reduces the switching losses compared to Silicon equivalents. The implementation of these switches is on the other hand very delicate and calls upon methodologies of multiphysics design in transversal disciplinary fields. It is, from the scientific literature addressed a number of scientific and technological obstacles that we can list:-Minimization of parasitic inductors of power modules (