en
State University (France), Browse similar opportunities
SL-DRT-21-0857
Emerging materials and processes for nanotechnologies and microelectronics
This work aims to explore the feasibility of new ionic layers extremely thin obtained by ALD technique (Atomic Layer Deposition). These inorganic solid state layers are major candidates as high performance dielectric for main applications like high density capacitances or synaptic transistors for neuromorphic computing. The preliminary effort will be focused on the intrinsic characterization of ALD-based layers (thickness200). The other challenge aims to reduce the ALD-based ionic layer thickness less than 5nm while still maintaining the advanced electric properties.This work covers multiple aspects including the ALD process, the ALD precursors, intrinsic layer development and technological integration on 3D components. Particular focus will be devoted to the physical-chemical, morphological and electrochemical characterizations of these layers.
Département des Plateformes Technologiques (LETI)
Laboratoire
Grenoble
BEDJAOUI Messaoud
CEA
DRT/DPFT/SDEP/LDJ
CEA-Grenoble17 avenue des martyrs
Phone number: 0438782926
Email: messaoud.bedjaoui@cea.fr
Grenoble INP
IMEP2: Ingénierie - Matériaux - Environnement - Energétique - Procédés - Production
https://www.leti-cea.fr/cea-tech/leti
Start date on 01-09-2021
BOUCHET Renaud
CNRS
LEPMI
Pr Renaud Bouchet grenoble INP (Phelma), LEPMI UMR5279, 1130 rue de la piscine, 38402 St Martin d’Hères.
Phone number: 0476826786
Email: renaud.bouchet@lepmi.grenoble-inp.fr
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